专利详情

专利名称	Defect detection system for extreme ultraviolet lithography mask
申请号	US201214391682	专利类型	US
公开（公告）号	US9546964(B2)	公开（授权）日	2017.01.17
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Li Hailiang;Xie Changqing;Liu Ming;Li Dongmei;Niu Jiebin;Shi Lina;Zhu Xiaoli
主分类号	G06K9/00	IPC主分类号	G06K9/00;G01N21/88;G03F1/84;G02B21/16;G02B27/42;G01N21/47;G01N21/95;G06T7/00;G01N21/956
专利有效期	Defect detection system for extreme ultraviolet lithography mask 至Defect detection system for extreme ultraviolet lithography mask	法律状态
说明书摘要	A defect detection system for an extreme ultraviolet lithography mask comprises an extreme ultraviolet light source (1), extreme ultraviolet light transmission parts (2, 3), an extreme ultraviolet lithography mask (4), a photon sieve (6) and a collection (7) and analysis (8) system. Point light source beams emitted by the extreme ultraviolet light source (1) are focused on the extreme ultraviolet lithography mask (4) through the extreme ultraviolet light transmission parts (2, 3); the extreme ultraviolet lithography mask (4) emits scattered light and illuminates the photon sieve (6); and the photon sieve (6) forms a dark field image and transmits the same to the collection (7) and analysis (8) system. The defect detection system for the extreme ultraviolet photolithographic mask uses the photon sieve to replace a Schwarzchild objective, thereby realizing lower cost, relatively small size and high resolution.