专利详情

专利名称	Preparation method of crystalline silicon film based on layer transfer
申请号	US201414890081	专利类型	US
公开（公告）号	US9502240(B2)	公开（授权）日	2016.11.22
申请（专利权）人	中国科学院上海高等研究院	发明（设计）人	Liu Dongfang;Zhang Wei;Chen Xiaoyuan;Yang Hui;Wang Cong;Lu Linfeng
主分类号	H01L21/44	IPC主分类号	H01L21/44;H01L21/02;H01L21/306;H01L21/3065;H01L31/18
专利有效期	Preparation method of crystalline silicon film based on layer transfer 至Preparation method of crystalline silicon film based on layer transfer	法律状态
说明书摘要	Provided is a preparation method of a crystalline silicon film. The method includes: 1) forming a mask for making a periodic silicon rod array on a monocrystalline silicon wafer substrate, and forming the periodic silicon rod array on the monocrystalline silicon substrate by a wet chemical etching or dry etching process; 2) forming barrier layers both on the surface of the monocrystalline silicon substrate and the surface of the silicon rod array for next selectively epitaxial growth of silicon; 3) exposing silicon cores on the heads of the rod array by a selective etching process to form a protruded silicon seeds out of the mother wafer substrate; 4) growing a continuous silicon film at the top of the rod array by a selective epitaxial chemical vapor deposition method using the exposed silicon cores as protruded seeds while leaving voids between the film and the mother wafer substrate; and 5) lifting off the silicon film and transferring the silicon film to a preset substrate, and the seeded substrate is reusable.